npn 2n5320 ? 2n5321 comset semiconductors 1/3 s s i i l l i i c c o o n n p p l l a a n n a a r r e e p p i i t t a a x x i i a a l l t t r r a a n n s s i i s s t t o o r r s s the 2n5320 and 2n5321 are npn transistors mounted in to-39 metal case . they are especially intended for high-voltage m edium power applications in industrial and commercial equipements. compliance to rohs absolute maximum ratings symbol ratings value unit v ceo collector-emitter voltage (i b = 0) 2n5320 75 v 2n5321 50 v cbo collector-base voltage (i e = 0) 2n5320 100 v 2n5321 75 v cev collector-emitter voltage (v be = 1.5v) 2n5320 100 v 2n5321 75 v ebo emitter-base voltage (i c = 0) 2n5320 6 v 2n5321 5 i c collector current 2n5320 2 a 2n5321 i b base current 2n5320 1 a 2n5321 p d total power dissipation @ t amb = 25 2n5320 1 watts 2n5321 @ t case = 25 2n5320 10 2n5321 t j junction temperature 2n5320 -65 to +200 c 2n5321 t stg storage temperature range 2n5320 -65 to +200 c 2n5321 thermal characteristics symbol ratings value unit r thj-a thermal resistance, junction to ambient 175 c/w r thj-c thermal resistance, junction to case 17.5 c/w
npn 2n5320 ? 2n5321 comset semiconductors 2/3 electrical characteristics tc=25c unless otherwise noted symbol ratings test condition(s) min typ max unit i cbo collector cutoff current v cb = 80 v, i e =0 2n5320 - - 0.5 a v cb = 60 v, i e =0 2n5321 - - 5 i ebo emitter cutoff current v eb = 5 v, i c =0 2n5320 - 0.1 - a v eb = 4 v, i c =0 2n5321 - 0.5 - v ceo collector emitter breakdown voltage i c = 10 ma, i b =0 2n5320 75 - - v 2n5321 50 - - v cev collector emitter breakdown voltage i c = 100 a v be = 1.5v 2n5320 100 - - v 2n5321 75 - - v ebo emitter base breakdown voltage i e = 100 a, i c =0 2n5320 6 - - v 2n5321 5 - - h fe (*) dc current gain i c = 500 ma v ce = 4 v 2n5320 30 - 130 - 2n5321 40 - 250 i c = 1 a v ce = 2 v 2n5320 10 - - v ce(sat) (*) collector-emitter saturation voltage i c = 500 ma i b = 50 ma 2n5320 - - 0.5 v 2n5321 - - 0.8 v be (*) base-emitter voltage i c = 500 ma v ce = 4 v 2n5320 - - 1.1 v 2n5321 - - 1.4 f t transition frequency i c = 50 ma v ce = 4 v f = 10 mhz 2n5320 50 - - mhz 2n5321 t on turn-on time i c = 500 ma v cc = 30 v i b1 = 50 ma 2n5320 - - 80 ns 2n5321 t off turn-off time i c = 500 ma v cc = 30 v i b1 = -i b2 = 50 ma 2n5320 - - 800 ns 2n5321 (*) pulse conditions : tp < 300 s, =1%
npn 2n5320 ? 2n5321 comset semiconductors 3/3 mechanical data case to-39 revised september 2012 ????????? information furnished is believed to be accurate and reliable. ho wever, comset semiconductors assu mes no responsibility for the consequences of use of such information nor for any infringement of patents or ot her rights of third parties which may results from its use. da ta are subject to change without notice. comset se miconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does comset semiconductors assu me any liability arising out of the applic ation or use of any product and specifica lly disclaims any and all liability, including without limitation consequential or inci dental damages. comset semicon ductors? products are not author ized for use as critical components in life support devices or systems. ? www.comsetsemi.com info@comsetsemi.com dimensions (mm) min max a 8.50 9.39 b 7.74 8.50 c 6.09 6.60 d 0.40 0.53 e - 0.88 f 2.41 2.66 g 4.82 5.33 h 0.71 0.86 j 0.73 1.02 k 12.70 - l 42 48 pin 1 : emitter pin 2 : base pin 3 : collector case : collector
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